1. gate(fet1) 4. drain(fet2) 2. source(fet1,2) 5. drain(fet1) 3. gate(fet2) ? absolute maximum ratings y ta = 25 c 1. gate(fet1) 4. drain(fet2) 2. source(fet1,2) 5. drain(fet1) 3. gate(fet2) publication date: october 2012 ver. bed pin name 150 100200 mw mama fet1fet2 v 150 -55 to +150 c 12 drain-source voltagegate-source voltage overall FC5516010R ? packaging c sc-113cb 60 FC5516010R dual n-channel mosfet id idp drain currentdrain current (pulsed) code 1 FC5516010R embossed type (thermo-compression sealing): panasonic smini5-f3-b 3 000 pcs / reel (standard) dual fk350601 (source common type) ? basic part number ? marking symbol: v5 rating internal connection sot-353 unit: mm ? halogen-free / rohs compliant (eu rohs / ul-94 v-0 / msl:level 1 compliant) ? features ? low drive voltage: 2.5 v drive for switching jeita vgs symbol vds unit parameter v pd tstg tch channel temperaturestorage temperature total power dissipation 12 3 4 5 fet1 fet2 12 3 4 5 fet1 fet2 1 2 3 4 5 downloaded from: http:///
? electrical characteristics ta = 25 c 3 c fet1,fet2 note measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. *1 see test circuit ver. bed 7 12 output capacitance input capacitance forward transfer admittance |yfs| ciss coss gate-source threshold voltage vth 1.2 igss id = 1.0 a, vds = 3.0 v 0.9 unit parameter min typ max symbol conditions drain-source breakdown voltage vdss id = 1.0 ma, vgs = 0 v 60 vgs = 10 v, vds = 0 v zero gate voltage drain current idss vds = 60 v, vgs = 0 v gate-source leakage current 1.0 a 1512 ms 2 3 reverse transfer capacitance crss vds = 3 v, vgs = 0 v, f = 1 mhz pf FC5516010R 1.5 10 a v 86 v 60 20 id = 10 ma, vds = 3.0 v 100 ns 100 ns turn-on time *1 turn-off time *1 ton toff vdd = 3 v, vgs = 0 v to 3 v id = 10 ma vdd = 3 v, vgs = 3 v to 0 v id = 10 ma drain-source on-state resistance id = 10 ma, vgs = 4.0 v id = 10 ma, vgs = 2.5 v rds(on)1rds(on)2 downloaded from: http:///
*1 test circuit ver. bed FC5516010R 3 vin vout 10 % 90 % ton 90 % 10 % toff vin 50 vou t vdd = 3 v id = 10 marl = 300 d s g vin 0 v 3 v pw = 10 s d.c. 1 % downloaded from: http:///
ver. bed FC5516010R 4 id - vds id - vgs vds - vgs rds(on) - id capacitance - vds 0 0.02 0.04 0.06 0.08 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 drain-source voltage vds (v) drain current id (a) vgs = 4.0 v 1.5 v 2.5 v 2.0 v 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 0123 gate-source voltage vgs (v) drain current id (a) 25 c ta = 85 c -30 c 0 0.5 23456 gate-source voltage vgs (v) drain-source voltage vds (v) 5 ma id = 20 ma 10 ma 1 10 0.001 0.01 0.1 drain current id (a) drain to source on-state resistance rds(on) ( ) vgs = 4.0 v 2.5 v 1 10 100 0.1 1 10 100 drain-source voltage vds (v) capacitance c (pf) ciss coss crss downloaded from: http:///
ver. bed FC5516010R safe operating area 5 vth - ta rds(on) - ta pd - ta rth -tsw 0 0.5 1 1.5 2 2.5 -50 0 50 100 150 temperature ta (c) gate-source threshold voltage vth (v) 0 0.1 0.2 0 50 100 150 temperature ta ( c) total power dissipation pd (w) 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 pulse width tsw (s) thermal resistance rth ( c/w) 0 2 4 6 8 10 12 -50 0 50 100 150 200 temperature ta ( c) drain-source on-state resistance rds(on) ( ) 2.5 v vgs = 4.0 v 0.0001 0.001 0.01 0.1 1 0.01 0.1 1 10 100 1000 drain-source voltage vds (v) drain current id (a) idp = 0.2 a operation in this areais limited by rds(on) ta = 25 c, glass epoxy board (25.4 25.4 t0.8 mm)coated with copper foil, which has more than 300 mm 2 . 100 ms 1 s dc 1 ms 10 ms downloaded from: http:///
ver. bed FC5516010R 6 unit: mm smini5-f3-b ? land pattern (reference) (unit: mm) downloaded from: http:///
request for your special attention and precautions in using the technical information and semiconductors described in this book (1) if any of the products or technical information described in this book is to be exported or provided to non-resident s, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) the technical information described in this book is intended only to sh ow the main characteristics and application circuit examples of the products. no license is granted in and to any intellectual p roperty right or other right owned by panasonic corporation or any other c ompany. therefore, no responsibilit y is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information de-scribed in this book. (3) the products described in this book are intended to be used for general a pplications (such as office equipment, communications equipment, measuring instruments and household applian ces), or for specific applications as expressly stated in this book. please consult with our sales staff in advance for information on the follo wing applications, moreover please exchange documents separately on terms of use etc.: special applications (such as f or in-vehicle equipment, airplanes, aerospace, automotive equipment, traffic signal ing equipment, combustion equipme nt, medical equipment and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. unless exchanging documents on terms of use etc. in advance, it is to be unde rstood that our company shall not be held responsible for any damage incurred as a result of or in connection with you r using the products described in this book for any special application. (4) the products and product specific ations described in this book are sub ject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use o f the products, therefore, ask for the most up- to-date product standards in advance t o make sure that the latest specifications satisfy your requirements. (5) when designing your equipment, comply with the range of absolute maxim um rating and the guaranteed operating conditions (operating power supply v oltage and operating environment et c.). especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power- on, power-off and mode-switching. other- wise, we will not be liable for any defect which may arise later in your equip ment. even when the products are used withi n the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures o n the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) comply with the instructions for use in order to prevent breakdown and characteristics change due to external fact ors (esd, eos, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. we do not guarantee quality for disassembled p roducts or the product re-mounte d after removing from the mounting board. when using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) when reselling products described in this book to other companies with out our permission and receiving any claim of request from the resale destination, please understand that customers wi ll bear the burden. (8) this book may be not reprinted or reproduced whether wholly or partiall y, without the prior written permission of our company. no.010618 downloaded from: http:///
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